­
­
­
­

Inventi Impact: VLSI

Articles

  • Inventi:evs/32221/20
    Design and Development of BTI Model and 3D InGaAs HEMT-Based SRAM for Reliable and Secure Internet of Things Application
    Research 2020 : July - September
    Nandakishor Yadav, Mahmoud Alashi, Kyuwon Ken Choi

    It is broadly accepted that the silicon-based CMOS has touched its scaling limits and\nalternative substrate materials are needed for future technology nodes. An Indium-Gallium-Arsenide\n(InGaAs)-based device is well situated for further technology nodes.......................

    How to Cite this Article
    Attribution/ CC Compliant Citation: Yadav, Nandakishor, Mahmoud Alashi, and Kyuwon Ken Choi. \"Design and Development of BTI Model and 3D InGaAs HEMT-Based SRAM for Reliable and Secure Internet of Things Application.\" Electronics 9.3 (2020): 469.\nhttps://doi:10.3390/electronics9030469\nhttp://creativecommons.org/licenses/by/4.0/\n\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
    Download Full Text